Lanthanum gallium silicate (La₃Ga₅SiO₁₄, LGS) crystal waxaa iska leh nidaamka crystal saddex geesood ah, kooxda dhibic 32, kooxda meel bannaan P₃₂₁ (No.150). LGS waxay leedahay saameyno badan sida piezoelectric, electro-optical, rotation optical, iyo sidoo kale waxaa loo isticmaali karaa walxo laser ah iyada oo loo marayo doping. In 1982, Kaminskyiyo al. ayaa sheegay in kororka kiristaalo LGS ee doped. Sannadkii 2000, LGS crystals oo leh dhexroor 3 inch ah iyo dhererka 90 mm ayaa waxaa sameeyay Uda iyo Buzanov.

LGS crystal waa walxo piezoelectric aad u fiican oo leh nooc goyn oo ah isku xidhka heerkulka eber. Laakiin ka duwan codsiyada piezoelectric, codsiyada electro-optic Q-bedelashada waxay u baahan yihiin tayada crystal sare. Sannadkii 2003, Kongiyo al. Si guul leh u koray kiristaalo LGS oo aan lahayn cillado muuqda oo macroscopic ah iyadoo la adeegsanayo habka Czochralski, waxaana la ogaaday in jawiga korriinka uu saameeya midabka crystals. Waxay heleen kiristaalo LGS oo aan midab iyo cawl lahayn waxayna LGS ka dhigeen EO Q-switch oo cabbirkiisu yahay 6.12 mm × 6.12 mm × 40.3 mm. 2015, hal koox oo cilmi baaris ah oo ku taal Jaamacadda Shandong ayaa si guul leh u koray kiristaalo LGS oo leh dhexroor 50 ~ 55 mm, dhererka 95 mm, iyo culeyska 1100 g iyada oo aan lahayn cillado waaweyn oo muuqda.

Sannadkii 2003, kooxda cilmi-baarista ee kor ku xusan ee Jaamacadda Shandong waxay u oggolaatay laydhka laysarka inuu dhex maro kristal LGS laba jeer oo ay geliyeen saxan rubuc ah si ay uga hortagaan saameynta wareegga indhaha, sidaas darteed waxay xaqiiqsadeen codsiga saameynta wareegga indhaha ee LGS crystal. LGS EO Q-switch-kii ugu horreeyay ayaa la sameeyay oo si guul leh loogu dabaqay nidaamka laysarka.

Sannadkii 2012, Wang iyo al. Waxay diyaarisay LGS electro-optic Q-switch oo cabirkiisu yahay 7 mm × 7 mm × 45 mm, wuxuuna xaqiiqsaday wax soo saarka 2.09 μm pulsed laser beam (520mJ) oo ku dhex jira laambad lagu shubay Cr,Tm,Ho:YAG laser system . Sannadkii 2013, 2.79 μm pulsed laser beam (216 mJ) ayaa lagu gaadhay nalka-flash-ka ee la bamgareeyay Cr, Er:YSGG laser, oo leh ballac garaaca garaaca 14.36 ns. 2016, Maiyo al. loo adeegsaday 5mm × 5 mm × 25 mm LGS EO Q beddelka Nd:LuVO4 laser system, si loo xaqiijiyo heerka ku celcelinta ee 200 kHz, taas oo ah celceliska celceliska ugu sarreeya ee LGS EO Q-laysarka nidaamka layska warbixiyey si guud hadda.

Qalabka EO Q-beddelka ahaan, LGS crystal wuxuu leeyahay xasillooni heerkul wanaagsan iyo heer dhaawac sare leh, wuxuuna ku shaqeyn karaa soo noqnoqoshada sare. Si kastaba ha ahaatee, waxaa jira dhibaatooyin dhowr ah: (1) Walxaha ceeriin ee LGS crystal waa qaali, mana jirto wax horumar ah oo lagu beddelayo gallium oo aluminium ah oo ka jaban; (2) Isku-dhafka EO ee LGS waa mid yar. Si loo yareeyo korantada hawlgalka ee dhismaha ee hubinta aperture ku filan, dhererka crystal ee qalabku wuxuu u baahan yahay in si toos ah loo kordhiyo, taas oo aan kordhinayn oo kaliya kharashka laakiin sidoo kale waxay kordhisaa khasaaraha gelinta.

LGS Crystal - TECHNOLOGY WISOPTIC